Silicon carbide diode bridge circuit for capacitive sensor readout in high temperature (673K) environmnet

R. Chand, S. Tanaka, M. Esashi

研究成果: Conference contribution

抄録

Sensing using a micro-device at high temperature is a critical problem as a Si readout circuit does not work at high temperature, even if a sensor itself is heat-resistive. We for the first time proposed and demonstrated a SiC diode bridge circuit for capacitive sensor readout at high temperature. SiC pn-junction diodes were tested at high temperature up to 673 K. The SiC diode circuit was constructed on a sapphire substrate with Ni wedge wire bonding and die attach using high temperature conductive paste. The concept was demonstrated using a MOS capacitor bank as a dummy sensor, and differential capacitance was successfully read at 673 K.

本文言語English
ホスト出版物のタイトル2013 Transducers and Eurosensors XXVII
ホスト出版物のサブタイトルThe 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
ページ1020-1023
ページ数4
DOI
出版ステータスPublished - 2013
イベント2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 - Barcelona, Spain
継続期間: 2013 6 162013 6 20

出版物シリーズ

名前2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013

Other

Other2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
CountrySpain
CityBarcelona
Period13/6/1613/6/20

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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