Silicon carbide coating on diamond powder by rotary chemical vapor deposition

Hirokazu Katsui, Zhenhua He, Takashi Goto

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

Silicon carbide (SiC) layers were prepared on diamond powders by rotary chemical vapor deposition (RCVD) using C6H18Si2 as a precursor. Diamond particles with cleavable and sharp configurations were covered with smooth layers by RCVD. Infrared absorption bands at around 800 and 1000 cm-1 attributed to Si-C bonding were observed in FTIR spectrum on the diamond powders. The pellet sample sintered by spark plasma sintering using the diamond powders suggested that β-SiC was deposited on the diamond particles.

本文言語English
ホスト出版物のタイトルMaterials Integration
出版社Trans Tech Publications Ltd
ページ65-68
ページ数4
ISBN(印刷版)9783037853764
DOI
出版ステータスPublished - 2012
イベントInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 - Sendai, Japan
継続期間: 2011 12月 12011 12月 2

出版物シリーズ

名前Key Engineering Materials
508
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

Other

OtherInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011
国/地域Japan
CitySendai
Period11/12/111/12/2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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