Silicon carbide coating on diamond powder by rotary chemical vapor deposition

Hirokazu Katsui; Zhenhua He; Takashi Goto

doi:10.4028/www.scientific.net/KEM.508.65

Silicon carbide coating on diamond powder by rotary chemical vapor deposition

Hirokazu Katsui, Zhenhua He, Takashi Goto

金属材料研究所・材料プロセス・評価研究部

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

Silicon carbide (SiC) layers were prepared on diamond powders by rotary chemical vapor deposition (RCVD) using C₆H₁₈Si₂ as a precursor. Diamond particles with cleavable and sharp configurations were covered with smooth layers by RCVD. Infrared absorption bands at around 800 and 1000 cm^-1 attributed to Si-C bonding were observed in FTIR spectrum on the diamond powders. The pellet sample sintered by spark plasma sintering using the diamond powders suggested that β-SiC was deposited on the diamond particles.

本文言語	English
ホスト出版物のタイトル	Materials Integration
出版社	Trans Tech Publications Ltd
ページ	65-68
ページ数	4
ISBN（印刷版）	9783037853764
DOI	https://doi.org/10.4028/www.scientific.net/KEM.508.65
出版ステータス	Published - 2012
イベント	Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 - Sendai, Japan 継続期間: 2011 12月 1 → 2011 12月 2

出版物シリーズ

名前	Key Engineering Materials
巻	508
ISSN（印刷版）	1013-9826
ISSN（電子版）	1662-9795

Other

Other	Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011
国/地域	Japan
City	Sendai
Period	11/12/1 → 11/12/2

ASJC Scopus subject areas

材料科学（全般）
材料力学
機械工学

文献へのアクセス

10.4028/www.scientific.net/KEM.508.65

他のファイルとリンク

引用スタイル

Katsui, H, He, Z & Goto, T 2012, Silicon carbide coating on diamond powder by rotary chemical vapor deposition. in Materials Integration. Key Engineering Materials, vol. 508, Trans Tech Publications Ltd, pp. 65-68, Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011, Sendai, Japan, 11/12/1. https://doi.org/10.4028/www.scientific.net/KEM.508.65

@inproceedings{5540aea2acb4493581c1509b13f46878,

title = "Silicon carbide coating on diamond powder by rotary chemical vapor deposition",

abstract = "Silicon carbide (SiC) layers were prepared on diamond powders by rotary chemical vapor deposition (RCVD) using C6H18Si2 as a precursor. Diamond particles with cleavable and sharp configurations were covered with smooth layers by RCVD. Infrared absorption bands at around 800 and 1000 cm-1 attributed to Si-C bonding were observed in FTIR spectrum on the diamond powders. The pellet sample sintered by spark plasma sintering using the diamond powders suggested that β-SiC was deposited on the diamond particles.",

keywords = "Diamond, Fourier Transform Infrared spectroscopy, Rotary chemical vapor deposition, SiC, Spark plasma sintering",

author = "Hirokazu Katsui and Zhenhua He and Takashi Goto",

year = "2012",

doi = "10.4028/www.scientific.net/KEM.508.65",

language = "English",

isbn = "9783037853764",

series = "Key Engineering Materials",

publisher = "Trans Tech Publications Ltd",

pages = "65--68",

booktitle = "Materials Integration",

note = "Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 ; Conference date: 01-12-2011 Through 02-12-2011",

}

TY - GEN

T1 - Silicon carbide coating on diamond powder by rotary chemical vapor deposition

AU - Katsui, Hirokazu

AU - He, Zhenhua

AU - Goto, Takashi

PY - 2012

Y1 - 2012

N2 - Silicon carbide (SiC) layers were prepared on diamond powders by rotary chemical vapor deposition (RCVD) using C6H18Si2 as a precursor. Diamond particles with cleavable and sharp configurations were covered with smooth layers by RCVD. Infrared absorption bands at around 800 and 1000 cm-1 attributed to Si-C bonding were observed in FTIR spectrum on the diamond powders. The pellet sample sintered by spark plasma sintering using the diamond powders suggested that β-SiC was deposited on the diamond particles.

AB - Silicon carbide (SiC) layers were prepared on diamond powders by rotary chemical vapor deposition (RCVD) using C6H18Si2 as a precursor. Diamond particles with cleavable and sharp configurations were covered with smooth layers by RCVD. Infrared absorption bands at around 800 and 1000 cm-1 attributed to Si-C bonding were observed in FTIR spectrum on the diamond powders. The pellet sample sintered by spark plasma sintering using the diamond powders suggested that β-SiC was deposited on the diamond particles.

KW - Diamond

KW - Fourier Transform Infrared spectroscopy

KW - Rotary chemical vapor deposition

KW - SiC

KW - Spark plasma sintering

UR - http://www.scopus.com/inward/record.url?scp=84859702321&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859702321&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/KEM.508.65

DO - 10.4028/www.scientific.net/KEM.508.65

M3 - Conference contribution

AN - SCOPUS:84859702321

SN - 9783037853764

T3 - Key Engineering Materials

SP - 65

EP - 68

BT - Materials Integration

PB - Trans Tech Publications Ltd

T2 - Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011

Y2 - 1 December 2011 through 2 December 2011

ER -

Silicon carbide coating on diamond powder by rotary chemical vapor deposition

抄録

出版物シリーズ

Other

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル