Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor

S. Toyoda, T. Shinohara, H. Kumigashira, M. Oshima, Y. Kato

研究成果: Article査読

45 被引用数 (Scopus)

抄録

We have investigated band discontinuities and chemical structures of Al2O3 gate insulator films on n-type GaN semiconductor by photoemission and x-ray absorption spectroscopy. It is found that the solid phase epitaxy at the GaN crystal during annealing procedures at 800 °C leads to phase transformation of Al2O3 films from amorphous to crystalline. Changes in crystallographic structures closely correlate with the significant increase in conduction band discontinuity at the Al 2O3/GaN interface, which suggests that epitaxial Al 2O3 films on GaN semiconductor, free from grain boundaries of Al2O3 polycrystalline, hold the potential for high insulation performance.

本文言語English
論文番号231607
ジャーナルApplied Physics Letters
101
23
DOI
出版ステータスPublished - 2012 12 3
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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