As the feature size of MOSFETs becomes increasingly small, the super self-aligned process is extremely important for the progress of ULSIs. The improvement of carrier mobility in the channel region is also indispensable. It has been reported that the introduction of high-quality Si1-xGex with x≈0.5 in the channel region drastically improves the pMOSFET performance. In this paper, it is shown that SiGe-channel 0.1-μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe chemical vapor deposition (CVD) have been successfully realized. The schematic device structure is described along with the fabrication process flow.