SiGe-channel 0.1-μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe CVD

D. Lee, M. Sakuraba, T. Matsuura, J. Murota, T. Tsuchiya

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

As the feature size of MOSFETs becomes increasingly small, the super self-aligned process is extremely important for the progress of ULSIs. The improvement of carrier mobility in the channel region is also indispensable. It has been reported that the introduction of high-quality Si1-xGex with x≈0.5 in the channel region drastically improves the pMOSFET performance. In this paper, it is shown that SiGe-channel 0.1-μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe chemical vapor deposition (CVD) have been successfully realized. The schematic device structure is described along with the fabrication process flow.

本文言語English
ホスト出版物のタイトル60th Device Research Conference, DRC 2002
出版社Institute of Electrical and Electronics Engineers Inc.
ページ83-84
ページ数2
ISBN(電子版)0780373170
DOI
出版ステータスPublished - 2002
イベント60th Device Research Conference, DRC 2002 - Santa Barbara, United States
継続期間: 2002 6 242002 6 26

出版物シリーズ

名前Device Research Conference - Conference Digest, DRC
2002-January
ISSN(印刷版)1548-3770

Other

Other60th Device Research Conference, DRC 2002
国/地域United States
CitySanta Barbara
Period02/6/2402/6/26

ASJC Scopus subject areas

  • 電子工学および電気工学

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