Sidewall protection by nitrogen in anisotropic etching of P-doped poly-Si1.xGex

Hang Sup Cho, Shinobu Takehiro, Masao Sakuraba, Junichi Murota

研究成果: Paper査読

抄録

Sidewall protection by nitrogen in anisotropic etching of P-doped poly-Si1.xGex has been investigated using electron-cyclotron-resonance (ECR) chlorine plasma. It is found that the sidewall protection with only N2 addition in chlorine plasma is weaker than that of P-doped poly-Si. Highly anisotropic etching of P-doped poly-Si0.4Ge0.6 is achieved by both N2 and SiCl4 additions. In the investigation of X-ray photoelectron spectroscopy (XPS) for P-doped poly-Si0.4Ge0.6 after the radical dominant etching, it is found that an ultrathin Si nitride film is formed by the addition of both SiCl4 and N2. From these results, it is suggested that highly anisotropic etching of P-doped poly-Si 1-xGex is achieved by the protective Si nitride formation on the sidewall against chlorine radical etching.

本文言語English
ページ243-250
ページ数8
出版ステータスPublished - 2004 12 1
イベントSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
継続期間: 2004 10 32004 10 8

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
国/地域United States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • 工学(全般)

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