Sidewall protection by nitrogen in anisotropic etching of P-doped poly-Si1.xGex has been investigated using electron-cyclotron-resonance (ECR) chlorine plasma. It is found that the sidewall protection with only N2 addition in chlorine plasma is weaker than that of P-doped poly-Si. Highly anisotropic etching of P-doped poly-Si0.4Ge0.6 is achieved by both N2 and SiCl4 additions. In the investigation of X-ray photoelectron spectroscopy (XPS) for P-doped poly-Si0.4Ge0.6 after the radical dominant etching, it is found that an ultrathin Si nitride film is formed by the addition of both SiCl4 and N2. From these results, it is suggested that highly anisotropic etching of P-doped poly-Si 1-xGex is achieved by the protective Si nitride formation on the sidewall against chlorine radical etching.
|出版ステータス||Published - 2004 12 1|
|イベント||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
継続期間: 2004 10 3 → 2004 10 8
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||04/10/3 → 04/10/8|
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