抄録
In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm -2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.
本文言語 | English |
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論文番号 | 013002 |
ジャーナル | Science and Technology of Advanced Materials |
巻 | 13 |
号 | 1 |
DOI | |
出版ステータス | Published - 2012 2月 |
ASJC Scopus subject areas
- 材料科学(全般)