Side etch control of n+-polysilicon with nitrogen added chlorine plasma

Takashi Matsuura, Junichi Murota, Tadahiro Ohmi, Soichi Ono

研究成果: Paper査読

1 被引用数 (Scopus)

抄録

n+-polysilicon etching with both high anisotropy and high selectivity has been realized in our previous work by irradiating the nitrogen added chlorine plasma under a low ion energy condition using an ultraclean ECR etcher. In the present paper, mechanisms of the side etch of n+-polysilicon with pure and nitrogen added chlorine plasmas are discussed. 1100 and 4500 A thick n+-polysilicon films with mask SiO2 films were etched with nitrogen added (<20%) chlorine plasmas under a highly selective condition at 4 mTorr using and ultraclean ECR plasma etcher described previously. The lateral etch length was determined by cross sectional SEM observation.

本文言語English
ページ418-419
ページ数2
DOI
出版ステータスPublished - 1992
イベントExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
継続期間: 1992 8 261992 8 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Side etch control of n<sup>+</sup>-polysilicon with nitrogen added chlorine plasma」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル