SiC/SiO2 micropatterning by ultraviolet irradiation and heat treatment of a poly(phenylsilyne) film

Akira Watanabe, Tadaharu Komatsubara, Osamu Ito, Minoru Matsuda

研究成果: Article査読

19 被引用数 (Scopus)

抄録

High-resolution micropatterning of SiC/SiO2 was achieved by combining the photochemical and thermal properties of poly(phenylsilyne) having Si-network structure. The laser flash photolysis of poly(phenylsilyne) film showed the formation of silyl radical as an intermediate during photodegradation. The XPS spectrum of the Si - Si chain changed into that of the siloxane chain by photo-oxidation in air. FT-IR spectra showed the formation of SiC and SiO2 by the heat treatment of unirradiated and irradiated poly(phenylsilyne) films, respectively. SiC/SiO2 micropatterning was obtained by the heat treatment of poly(phenylsilyne) film after ultraviolet irradiation with a photomask.

本文言語English
ページ(範囲)2796-2800
ページ数5
ジャーナルJournal of Applied Physics
77
6
DOI
出版ステータスPublished - 1995

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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