High-resolution micropatterning of SiC/SiO2 was achieved by combining the photochemical and thermal properties of poly(phenylsilyne) having Si-network structure. The laser flash photolysis of poly(phenylsilyne) film showed the formation of silyl radical as an intermediate during photodegradation. The XPS spectrum of the Si - Si chain changed into that of the siloxane chain by photo-oxidation in air. FT-IR spectra showed the formation of SiC and SiO2 by the heat treatment of unirradiated and irradiated poly(phenylsilyne) films, respectively. SiC/SiO2 micropatterning was obtained by the heat treatment of poly(phenylsilyne) film after ultraviolet irradiation with a photomask.
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