SiC wafer bonding using surface activation method for power device

Fengwen Mu, Masahisa Fujino, Tadatomo Suga, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi

研究成果: Conference contribution

抄録

This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with a Si-containing Ar ion beam could be ∼30% stronger and almost completely recrystallized by RTA without oxidation. The advantages of modified SAB with a Si-containing Ar ion beam are attributed to the assumed in-situ Si-compensation during surface activation.

本文言語English
ホスト出版物のタイトル18th International Conference on Electronic Packaging Technology, ICEPT 2017
編集者Chenxi Wang, Yanhong Tian, Tianchun Ye
出版社Institute of Electrical and Electronics Engineers Inc.
ページ660-663
ページ数4
ISBN(電子版)9781538629727
DOI
出版ステータスPublished - 2017 9月 19
外部発表はい
イベント18th International Conference on Electronic Packaging Technology, ICEPT 2017 - Harbin, China
継続期間: 2017 8月 162017 8月 19

出版物シリーズ

名前18th International Conference on Electronic Packaging Technology, ICEPT 2017

Other

Other18th International Conference on Electronic Packaging Technology, ICEPT 2017
国/地域China
CityHarbin
Period17/8/1617/8/19

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 電子材料、光学材料、および磁性材料
  • 金属および合金
  • ポリマーおよびプラスチック
  • 電子工学および電気工学
  • 産業および生産工学

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