Si(100)-(2×1) etching with fluorine: Planar removal versus three dimensional pitting

Koji S. Nakayama, J. H. Weaver

研究成果: Article査読

14 被引用数 (Scopus)

抄録

The morphologies achieved by thermally activated reactions of adsorbed F with Si(100)-(2×1) were studied with scanning tunneling microscopy. Dimer vacancies were produced in the top layer but, more significantly, there was a new reaction pathway that gave rise to multilayer pitting even when the surface concentration was very low. This pathway can be linked to the atomic structure of the exposed layer and the formation of SiF2 in that layer. It accounts for surface roughening, and it is very effective. 1999

本文言語English
ページ(範囲)3210-3213
ページ数4
ジャーナルPhysical Review Letters
83
16
DOI
出版ステータスPublished - 1999 10 18

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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