Si(001) surface variation with annealing in ambient

T. Komeda, Y. Kumagai

研究成果: Article査読

18 被引用数 (Scopus)

抄録

Monohydride termination and surface variation of (Formula presented) by annealing in (Formula presented) ambient has been investigated with scanning-tunneling-microscopy (STM). A clean (Formula presented) surface was annealed and cooled to room temperature in (Formula presented) ambient with various partial pressure of (Formula presented) Hydrogen termination of the surface is observed when (Formula presented) exceeds (Formula presented) and complete monohydride termination is obtained with (Formula presented) The results are reproduced well by the calculation using the temperature-dependent sticking coefficient of molecular (Formula presented) on Si(001). [Kolasinski et al., J. Chem. Phys. 101, 7082 (1994)]. The surface obtained by (Formula presented) annealing shows characteristic (Formula presented)-step shape, which has a long kink-free portion connected by a long kink. It is shown that the etching of Si surface by (Formula presented) is not responsible for the determination of the shape of (Formula presented) steps. Instead, the presence of passivating hydrogen at the temperature above the frozen temperature of step motion on Si(001) is the origin of the characteristic step shape.

本文言語English
ページ(範囲)1385-1391
ページ数7
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
58
3
DOI
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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