Si-SiO2 interface structures on Si(100), (111), and (110) surfaces

Takeo Hattori, Toshihisa Suzuki

    研究成果: Article査読

    96 被引用数 (Scopus)

    抄録

    The distributions of intermediate oxides (SiOx, 0<x<2) in ultrathin oxide films formed on (100), (111), and (110) surfaces were investigated by using the nondestructive measurements of Si 2p photoelectron spectra. The experimental observations can be understood as follows: (1) the abrupt interfaces are formed for three crystal orientations; (2) the interface formed at 1000°C on (100), (111), and (110) surface consists mainly of SiO, Si2O, and the mixture of SiO and Si2O, respectively; (3) Si2O3 is distributed in the oxide films for three crystal orientations.

    本文言語English
    ページ(範囲)470-472
    ページ数3
    ジャーナルApplied Physics Letters
    43
    5
    DOI
    出版ステータスPublished - 1983

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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