From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the effect of crystallographic orientation on the chemical shift was found, and the effects of oxidation temperature, oxidation atmosphere and annealing on the chemical shifts were found to be small. These results imply that chemical shifts are weakly affected by the change in the Si-O-Si bond angle near the Si-SiO2 interface.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1988 8|
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