Si-SiO2 interface structures - chemical shifts in Si 2p photoelectron spectra

Hiroaki Yamagishi, Noboru Koike, Keitaro Imai, Kikuo Yamabe, Takeo Hattori

    研究成果: Article査読

    29 被引用数 (Scopus)

    抄録

    From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the effect of crystallographic orientation on the chemical shift was found, and the effects of oxidation temperature, oxidation atmosphere and annealing on the chemical shifts were found to be small. These results imply that chemical shifts are weakly affected by the change in the Si-O-Si bond angle near the Si-SiO2 interface.

    本文言語English
    ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
    27
    8
    出版ステータスPublished - 1988 8

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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