Si nanofabrication using AFM field enhanced oxidation and anisotropic wet chemical etching

K. Morimoto, K. Araki, K. Yamashita, K. Monta, M. Niwa

研究成果: Article査読

40 被引用数 (Scopus)

抄録

We present a novel Si nanofabrication method based on an atomic force microscope (AFM) field-enhanced oxidation and an anisotropic wet chemical etching using SIMOX (separation by implanted oxygen) wafer. A newly developed AFM system enables this fabrication method to be fully compatible with a conventional VLSI process. Using this technique, Si quantum wire with a feature size of 60 nm has been successfully fabricated within the intended area. Moreover, by means of a structural analysis by cross-sectional transmission electron microscopy, it is confirmed that the AFM-field-enhanced oxide film has a similar excellent structure as thermally grown oxide.

本文言語English
ページ(範囲)652-659
ページ数8
ジャーナルApplied Surface Science
117-118
DOI
出版ステータスPublished - 1997 6月 2
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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