Si-fullerene compounds produced by controlling spatial structure of an arc-discharge plasma

Takamichi Hirata, Noriyuki Motegi, Rikizo Hatakeyama, Takeo Oku, Tetsu Mieno, Naoyuki Sato, Hiroshi Mase, Michio Niwano, Nobuo Miyamoto, Noriyoshi Sato

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Silicon-fullerene compounds are produced in a modified fullerene generator, where a direct-current (DC) or a radio-frequency (RF) discharge is superimposed in the periphery region of an arc-discharge plasma. The soot mass analysis gives spectrum peaks corresponding to silicon-endohedral fullerenes SiCn (n = 74, 86, etc.). The soot structure analyzes with X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) demonstrate that there exist nanoparticles with the fullerene size, which are considered to be SiCn, and carbon nanocapsules filled with SiC.

本文言語English
ページ(範囲)L1130-L1132
ジャーナルJapanese journal of applied physics
39
11 B
DOI
出版ステータスPublished - 2000 11 15

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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