Short channel MOS FET’s fabricated by self-aligned ion implantation and laser annealing

Masanobu Miyao, Mitsumasa Koyanagi, Hiroshi Tamura, Norikazu Hashimoto, Takashi Tokuyama

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Short channel MOS FET’s are successfully fabricated by a combination of selfaligned ion implantation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.

本文言語English
ページ(範囲)129-132
ページ数4
ジャーナルJapanese journal of applied physics
19
DOI
出版ステータスPublished - 1980 1
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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