A silicon integrated RF magnetic field probe has been designed and microfabricated using CMOS-silicon-on-insulator (SOI) technology with a 0.15-μm design rule on a high-resistivity silicon substrate. The size of the coil window was 180 × 180 μm3. Coil and electrodes were separated by a 530-μm-long stripline so as to avoid stray voltage induction at the electrode portion. This probe was applied to evaluate the radiated emission from a thin-film electromagnetic noise suppressor. It was clarified and shown that the field intensity was suppressed by 4.0 dB at the center of the signal line at 1 GHz.
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