Shallow traps and radiative recombination processes in Lu3 Al5 O12: Ce single crystal scintillator

M. Nikl, A. Vedda, M. Fasoli, I. Fontana, V. V. Laguta, E. Mihokova, J. Pejchal, J. Rosa, K. Nejezchleb

研究成果: Article査読

170 被引用数 (Scopus)

抄録

Thermally stimulated luminescence (TSL) glow curves and emission spectra were studied in undoped and Ce-doped Lu3 Al5 O12 single crystals by wavelength resolved TSL measurements in the 10-310 K temperature range. Isothermal phosphorescence measurements in the 10-100 K range were also performed, which point to the existence of a tunneling-driven radiative recombination process. These processes can explain the presence and time-dependence of the submicrosecond slow decay component in the scintillation decay. Electron paramagnetic resonance experiments suggest the presence of LuAl defects in the vicinity of Ce3+ ions, which are the most probable electron and hole traps participating in the tunneling-driven radiative recombination process.

本文言語English
論文番号195121
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
76
19
DOI
出版ステータスPublished - 2007 11月 21

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

フィンガープリント

「Shallow traps and radiative recombination processes in Lu3 Al5 O12: Ce single crystal scintillator」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル