抄録
In semiconductor spintronics, electron spin rather than charge is the key property. This paper describes several spin-related devices using spin-orbit interaction. We have experimentally confirmed that the spin-orbit interaction in a semiconductor two-dimensional electron gas channel can be controlled by a gate voltage. This is the first step towards the creation of functional spin devices. The operating principles of a spin field effect transistor, a spin filter, and a spin interference device are discussed.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 31-36 |
| ページ数 | 6 |
| ジャーナル | NTT Technical Review |
| 巻 | 2 |
| 号 | 6 |
| 出版ステータス | Published - 2004 6月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- コンピュータ サイエンスの応用
- コンピュータ ネットワークおよび通信
- 電子工学および電気工学