Semiconductor-metal transition and band-gap tuning in quasi-free-standing epitaxial bilayer graphene on SiC

Katsuaki Sugawara, Takafumi Sato, Kohei Kanetani, Takashi Takahashi

研究成果: Article査読

13 被引用数 (Scopus)

抄録

We have performed angle-resolved photoemission spectroscopy of quasi-free-standing bilayer graphene epitaxially grown on silicon carbide. Prepared bilayer graphene shows a semiconducting behavior with a finite energy gap at the Fermi level in contrast to the theoretical prediction. We found that potassium-deposition on the sample leads to the semiconductor-to-metal transition together with the enhancement of the gap energy between the π and π* bands. The observed controllable tuning of the Fermi-level position and the gap energy provides an important step toward the band-gap engineering with bilayer graphene.

本文言語English
論文番号024705
ジャーナルjournal of the physical society of japan
80
2
DOI
出版ステータスPublished - 2011 2

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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