TY - GEN
T1 - Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser
AU - Li, Ling Han
AU - Takigawa, Ryo
AU - Higo, Akio
AU - Kubota, Masanori
AU - Higurashi, Eiji
AU - Sugiyama, Masakazu
AU - Nakano, Yoshiaki
PY - 2009/10/2
Y1 - 2009/10/2
N2 - The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.
AB - The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.
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U2 - 10.1109/ICIPRM.2009.5012490
DO - 10.1109/ICIPRM.2009.5012490
M3 - Conference contribution
AN - SCOPUS:70349509725
SN - 9781424434336
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 230
EP - 233
BT - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
T2 - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Y2 - 10 May 2009 through 14 May 2009
ER -