Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser

Ling Han Li, Ryo Takigawa, Akio Higo, Masanori Kubota, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    研究成果: Conference contribution

    3 被引用数 (Scopus)

    抄録

    The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.

    本文言語English
    ホスト出版物のタイトルIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
    ページ230-233
    ページ数4
    DOI
    出版ステータスPublished - 2009 10 2
    イベントIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
    継続期間: 2009 5 102009 5 14

    出版物シリーズ

    名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
    ISSN(印刷版)1092-8669

    Other

    OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
    国/地域United States
    CityNewport Beach, CA
    Period09/5/1009/5/14

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

    フィンガープリント

    「Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル