Self-seeding crystallization of silicon thin films using continuous-wave laser

Shin Ichiro Kuroki, Shuntaro Fujii, Koji Kotani, Takashi Ito

研究成果: Conference contribution

抄録

Low temperature crystallization of amorphous silicon thin films using continuous-wave laser was investigated. An overlapping of laser beam exposure enhanced the crystallization of a polycrystalline Si thin film, and the silicon crystal nucleus grew its size laterally. A laser beam spot had an elliptical shape for a gradual slope of temperature in a laser irradiated region, and was elongated to a scanning direction. The elongated laser spot with a gradual slope of temperature made a crystallization time longer. Consequently, a two dimensional lateral crystallization of (100) well-oriented Si thin films was achieved. Copyright The Electrochemical Society.

本文言語English
ホスト出版物のタイトルSolid-State Joint Posters (General)
出版社Electrochemical Society Inc.
ページ71-75
ページ数5
10
ISBN(印刷版)9781566775212
DOI
出版ステータスPublished - 2006
イベント209th ECS Meeting - Denver, CO, United States
継続期間: 2006 5月 72006 5月 12

出版物シリーズ

名前ECS Transactions
番号10
2
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other209th ECS Meeting
国/地域United States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • 工学(全般)

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