@inproceedings{36468a6bf46047e3b52a98bb8842b866,
title = "Self-seeding crystallization of silicon thin films using continuous-wave laser",
abstract = "Low temperature crystallization of amorphous silicon thin films using continuous-wave laser was investigated. An overlapping of laser beam exposure enhanced the crystallization of a polycrystalline Si thin film, and the silicon crystal nucleus grew its size laterally. A laser beam spot had an elliptical shape for a gradual slope of temperature in a laser irradiated region, and was elongated to a scanning direction. The elongated laser spot with a gradual slope of temperature made a crystallization time longer. Consequently, a two dimensional lateral crystallization of (100) well-oriented Si thin films was achieved. Copyright The Electrochemical Society.",
author = "Kuroki, {Shin Ichiro} and Shuntaro Fujii and Koji Kotani and Takashi Ito",
year = "2006",
doi = "10.1149/1.2408945",
language = "English",
isbn = "9781566775212",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "71--75",
booktitle = "Solid-State Joint Posters (General)",
edition = "10",
note = "209th ECS Meeting ; Conference date: 07-05-2006 Through 12-05-2006",
}