Self-formation of MgO or Al2O3 surface layer by annealing of CuMg or CuAl dilute alloys

Y. F. Zhu, Q. Jiang, S. H. Hong, K. Mimura, M. Isshiki, J. W. Lim

研究成果: Article査読

抄録

Self-formation of MgO or Al2O3 surface layer on CuMg or CuAl alloys by annealing in H2 gas was investigated theoretically and experimentally. Theoretical consideration shows that Mg or Al can segregate to the surface of Cu during the annealing, while the enrichment ability is much stronger for Mg. Meanwhile, the MgO or Al2O3 surface layer is self-formed by the preferential reaction of Mg or Al with O2 remnant in H2 atmosphere. The Al2O3 surface layer is expected to play a role in passivating the surface of Cu. However, the MgO layer would suffer failure in passivating the surface due to incorporation of Cu and fissures formed in MgO during the annealing process. Our theoretical predictions are in agreement with experimental observations.

本文言語English
ページ(範囲)3035-3040
ページ数6
ジャーナルInternational Journal of Modern Physics B
24
15-16
DOI
出版ステータスPublished - 2010 6 30

ASJC Scopus subject areas

  • 統計物理学および非線形物理学
  • 凝縮系物理学

フィンガープリント

「Self-formation of MgO or Al<sub>2</sub>O<sub>3</sub> surface layer by annealing of CuMg or CuAl dilute alloys」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル