Based on simultaneous selective growth and composition modulation, Zn1-xCdxSe wire structures are spontaneously formed on cleavage-induced GaAs (110) surfaces by deposition of a Zn1-yCdySe (x > y) alloy layer. The wire structures are formed on the top edge of the steps introduced by cleavage. These wires show a strongly polarized emission and a large piezoelectric effect, implying a potential for applications in nonlinear optoelectronic devices. This paper discusses a novel approach to semiconductor nanostructures.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|号||11 SUPPL. B|
|出版ステータス||Published - 1997 11 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)