Self-assembled formation of ZnCdSe quantum dots on atomically smooth ZnSe surfaces on GaAs(001) by molecular beam epitaxy

Kenta Arai, Akihiro Ohtake, Takashi Hanada, Shiro Miwa, Tetsuji Yasuda, Takafumi Yao

研究成果: Conference article

10 引用 (Scopus)

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We investigate growth conditions to obtain atomically flat ZnSe film surfaces on GaAs(001) without forming ZnSe-related dot structures. It is found that high temperature growth is favorable for the growth of ZnSe with a smooth surface. In order to prevent degradation of interface properties at high substrate temperature, two-step growth of ZnSe layers is employed, where a low-temperature growth step is followed by high temperature growth. The two-step process enables one to grow ZnSe with atomically flat surface without ZnSe-related dots structures. The formation of self-assembled ZnCdSe quantum dots (QDs) is achieved on such atomically surfaces. Typical QD size is: base diameter of 21±3 nm and height of 8±2 nm. Even at a total deposition of ZnCdSe of 3.5 monolayer (ML), the QD density is as low as approximately 2.4 μm-2. It is found that these QDs are formed on a ZnCdSe wetting layer whose thickness is at least 3 ML.

元の言語English
ページ(範囲)1-7
ページ数7
ジャーナルThin Solid Films
357
発行部数1
DOI
出版物ステータスPublished - 1999 12 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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