@inproceedings{f165749b643045d5825b4a4ede04b77f,
title = "Self-aligned metal/IDP Si bipolar technology with 12-ps ECL and 45-GHz dynamic frequency divider",
abstract = "A self-aligned stacked metal/IDP (SMI) Si bipolar transistor technology that offers low base resistance with shallow impurity profiles is described. This technology makes it possible to obtain ultra-high-speed operation with a 12-ps gate-delay ECL and a 45-GHz dynamic frequency divider. These measured data are the best yet reported for Si technology.",
author = "Katsuyoshi Washio and Eiji Ohue and Masamichi Tanabe and Takahiro Onai",
year = "1996",
month = jan,
day = "1",
language = "English",
isbn = "9782863321966",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "807--810",
editor = "Massimo Rudan and Giorgio Baccarani",
booktitle = "ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference",
note = "26th European Solid State Device Research Conference, ESSDERC 1996 ; Conference date: 09-09-1996 Through 11-09-1996",
}