Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy

Hidemi Shigekawa; Haruhiro Oigawa; Koji Miyake; Yoshiaki Aiso; Yasuo Nannichi; Tomihiro Hashizume; Toshio Sakurai

doi:10.1063/1.112246

Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy

Hidemi Shigekawa, Haruhiro Oigawa, Koji Miyake, Yoshiaki Aiso, Yasuo Nannichi, Tomihiro Hashizume, Toshio Sakurai

研究成果: Article › 査読

17 被引用数 (Scopus)

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An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga₂Se₃-like structure with ordered 1/3 ML Ga vacancies was proposed.

本文言語	English
ページ（範囲）	607-609
ページ数	3
ジャーナル	Applied Physics Letters
巻	65
号	5
DOI	https://doi.org/10.1063/1.112246
出版ステータス	Published - 1994
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.112246

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abstract = "An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed.",

author = "Hidemi Shigekawa and Haruhiro Oigawa and Koji Miyake and Yoshiaki Aiso and Yasuo Nannichi and Tomihiro Hashizume and Toshio Sakurai",

year = "1994",

doi = "10.1063/1.112246",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy

AU - Shigekawa, Hidemi

AU - Oigawa, Haruhiro

AU - Miyake, Koji

AU - Aiso, Yoshiaki

AU - Nannichi, Yasuo

AU - Hashizume, Tomihiro

AU - Sakurai, Toshio

PY - 1994

Y1 - 1994

N2 - An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed.

AB - An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed.

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SP - 607

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy

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