Selective nitrogen doping of graphene by energy-controlled neutral beam

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Nitrogen-doped graphene potentially could be used in electronic devices, sensors, and energy-based devices. The bonding state between the carbon and nitrogen for each application plays an important role, e.g., the graphitic nitrogen has a high catalytic activity in fuel cell systems. However, it is still difficult to synthesize the bonding state selectivity. We conducted a nitrogen neutral beam modification of graphene, which has precise controllable beam energy. XPS analysis revealed that the bonding state of the carbon nitrogen depends on the beam energy and a moderate level of beam energy from a nitrogen neutral beam selectively forms graphitic carbon. The bonding state control during the nitrogen doping process was found to be possible, and a neutral beam induced doped graphene synthesis could potentially be better for many different applications.

本文言語English
ホスト出版物のタイトルIEEE-NANO 2015 - 15th International Conference on Nanotechnology
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1247-1249
ページ数3
ISBN(電子版)9781467381550
DOI
出版ステータスPublished - 2015
イベント15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
継続期間: 2015 7 272015 7 30

出版物シリーズ

名前IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Other

Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period15/7/2715/7/30

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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