Selective growth of GaAs microcrystals grown on Se-terminated GaAlAs surface for the quantum well box structure

Toyohiro Chikyow, Nobuyuki Koguchi

研究成果: Conference contribution

抄録

A selective growth of GaAs microcrystals was demonstrated on a Se-terminated GaAlAs surface. Ga molecules were supplied to the Se-terminated GaAlAs surface at first. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. After the following As molecule supply to the surface, a selective GaAs microcrystal growth from Ga droplets was observed. The cross sectional investigations by the high resolution electron microscope revealed epitaxial growth of GaAs microcrystals with (111) facets and a possibility of (GaAl)2Se3 layer formation at the GaAs/Se-terminated GaAlAs interface.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings
出版社Publ by Materials Research Society
ページ765-770
ページ数6
ISBN(印刷版)1558991786
出版ステータスPublished - 1993 1 1
外部発表はい
イベントProceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA
継続期間: 1992 11 301992 12 4

出版物シリーズ

名前Materials Research Society Symposium Proceedings
283
ISSN(印刷版)0272-9172

Other

OtherProceedings of the Second Symposium on Dynamics in Small Confining Systems
CityBoston, MA, USA
Period92/11/3092/12/4

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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