Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gases

Engineering

• Germanium 100%
• Silicon 100%
• Dangling Bond 50%
• Si Substrate 50%
• Growth Mechanism 50%
• Partial Pressure 50%
• Epitaxial Film 50%
• Dependent Growth 50%
• Deposition Parameter 50%
• Experiments 50%
• Lower Temperature 50%
• Surfaces 50%
• High Purity 50%

Material Science

• Epitaxy 100%
• Gas 100%
• Low Pressure Chemical Vapor Deposition 100%
• Epitaxial Film 50%
• Surface 50%