Selective deposition of diamond films on insulators by selective seeding with a double-layer mask

H. W. Liu, C. X. Gao, X. Li, C. X. Wang, Y. H. Han, G. T. Zou

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Polycrystalline diamond films have been patterned on Si3N4/Si and SiO2/Si substrates by selective seeding with a double-layer mask via hot-filament chemical vapor deposition. High quality in the patterned diamond films and high selectivity were obtained by the process. The diamond films deposited on the insulators at different CH4/H2 concentrations were studied by scanning electron microscopy and Raman spectroscopy. The process proved to be far less damaging to the substrates, and yet effective in developing patterns of diamond films on a large and different substrate.

本文言語English
ページ(範囲)1573-1577
ページ数5
ジャーナルDiamond and Related Materials
10
9-10
DOI
出版ステータスPublished - 2001 9月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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