Segregation of vanadium at the WC/Co interface in VC-doped WC-Co

A. Jaroenworaluck, T. Yamamoto, Y. Ikuhara, T. Sakuma, T. Taniuchi, K. Okada, T. Tanase

    研究成果: Article

    59 引用 (Scopus)

    抜粋

    Morphology of carbide grain in WC-12 wt. % Co-0.5 wt. % VC was examined by HREM and EDS with a special interest in the segregation of V at the WC/Co interfaces. A small addition of VC in WC-Co is effective to suppress the grain growth of carbide grains. HREM observation revealed that the WC/Co interfaces are faceted and consist of mainly two kinds of habit planes, (1010) and (0001), respectively. EDS analyses clearly showed the segregation of doped V along the interfaces. In addition, the concentration of segregated V is higher at the (0001) type habit plane than (1010) one. The retardation of the grain growth of carbide grains in the VC-doped WC-Co is closely related to the formation of the faceted WC/Co interface.

    元の言語English
    ページ(範囲)2450-2452
    ページ数3
    ジャーナルJournal of Materials Research
    13
    発行部数9
    DOI
    出版物ステータスPublished - 1998 9

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    フィンガープリント Segregation of vanadium at the WC/Co interface in VC-doped WC-Co' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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    Jaroenworaluck, A., Yamamoto, T., Ikuhara, Y., Sakuma, T., Taniuchi, T., Okada, K., & Tanase, T. (1998). Segregation of vanadium at the WC/Co interface in VC-doped WC-Co. Journal of Materials Research, 13(9), 2450-2452. https://doi.org/10.1557/JMR.1998.0341