Segregation of gold at dislocations confirmed by gold diffusion into highly dislocated silicon

H. Bracht, A. Rodriguez Schachtrup, I. Yonenaga

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We report on Au-diffusion experiments performed between 850°C and 1100°C into plastically deformed Si monocyrstals, undoped and uniformly doped with a B concentration of 3×1019 cm-3. After indiffusion, Au profiles were monitored with neutron activation analysis (NAA) in conjunction with mechanical sectioning. The profiles show Au-diffusion to be faster in heavily B-doped Si than in undoped samples. Fitting of the experimental profiles which are accurately described with complementary error functions yields an effective diffusion coefficient DAueff and a boundary concentration CAu(x=0). Data for DAueff and CAu(x=0) obtained for diffusion temperatures lower than 1000°C are considerably lower and higher, respectively, than expected from the extrapolation based on the high-temperature results. The unusual temperature dependence of DAueff and CAu(x=0) is explained taking into account segregation of Au at dislocations in addition to the kick-out diffusion mechanism which is the generally accepted process for Au diffusion in dislocation-free Si. The segregation of Au at dislocations is found to increase with decreasing temperature with an activation enthalpy of about -1.9 eV. From the influence of doping observed on Au diffusion into dislocated Si, we deduce that interstitial Au is positively charged in p-type Si and introduces a donor level at about 0.47 eV above the valence-band edge.

本文言語English
ページ(範囲)1783-1788
ページ数6
ジャーナルMaterials Science Forum
258-263
9993
DOI
出版ステータスPublished - 1997

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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