Segregation of Ga during growth of Si single crystal

Takeshi Hoshikawa, Xinming Huang, Satoshi Uda, Toshinori Taishi

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Segregation phenomenon of Ga in Czochralski (CZ)-Si crystal growth has been investigated. The effective segregation coefficient, keff, of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k0=0.0079.

本文言語English
ページ(範囲)338-340
ページ数3
ジャーナルJournal of Crystal Growth
290
2
DOI
出版ステータスPublished - 2006 5 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「Segregation of Ga during growth of Si single crystal」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル