Segregation coefficients of various dopants in SixGe1-x (0.93<x<0.96) single crystals

I. Yonenaga, T. Ayuzawa

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Si-rich SixGe1-x alloys (0.93<x<0.96) heavily doped with B, Ga, In, P, As and Sb were grown by the Czochralski technique. Full single crystals more than 50 mm in length with a maximum diameter of 25 mm were successfully grown. Segregation coefficients of the dopants in the Si-rich SiGe alloys were evaluated based on the variation of carrier concentrations, measured by Hall effect measurements, along the direction of growth of the single crystals. The segregation coefficients of Ga, In and Sb increased drastically in SiGe alloys in comparison with those in Ge and Si crystals. The P segregation coefficient increased, while the B segregation coefficient decreased with increasing concentration in SiGe alloys. The variation of dopant segregation coefficients induced by the incorporation of Ge atoms into Si may be attributed to elastic interaction due to the size misfit among the relevant atoms.

本文言語English
ページ(範囲)14-19
ページ数6
ジャーナルJournal of Crystal Growth
297
1
DOI
出版ステータスPublished - 2006 12月 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「Segregation coefficients of various dopants in SixGe1-x (0.93<x<0.96) single crystals」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル