抄録
The seeded growth of GaN single crystals was performed at 780°a N 2 pressure of 5 MPa by the Na flux method using Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na-Ga melt. The thickness of the crystals grown on the seeds by heating for 400h was approximately 150 μm in the directions perpendicular to the prismatic and pyramidal planes, implying a growth rate of at least U.4 μm/h.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L898-L900 |
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 45 |
| 号 | 33-36 |
| DOI | |
| 出版ステータス | Published - 2006 8月 25 |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）