Seeded growth of GaN single crystals by Na flux method using Na vapor

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The seeded growth of GaN single crystals was performed at 780°a N 2 pressure of 5 MPa by the Na flux method using Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na-Ga melt. The thickness of the crystals grown on the seeds by heating for 400h was approximately 150 μm in the directions perpendicular to the prismatic and pyramidal planes, implying a growth rate of at least U.4 μm/h.

本文言語English
ページ(範囲)L898-L900
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
45
33-36
DOI
出版ステータスPublished - 2006 8月 25

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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