The seeded growth of GaN single crystals was performed at 780°a N 2 pressure of 5 MPa by the Na flux method using Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na-Ga melt. The thickness of the crystals grown on the seeds by heating for 400h was approximately 150 μm in the directions perpendicular to the prismatic and pyramidal planes, implying a growth rate of at least U.4 μm/h.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 2006 8月 25|
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