SEED SHAPE DEPENDENCE OF Si SOLID PHASE EPITAXY.

Eiichi Murakami, Masahiro Moniwa, Kikuo Kusukawa, Masanobu Miyao, Terunori Warabisako, Yasuo Wada

    研究成果: Conference contribution

    4 被引用数 (Scopus)

    抄録

    A new facet formation mode in Si lateral solid phase epitaxy (L-SPE) of amorphous Si on SiO//2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a slowly growing left brace 111 right brace facet or a fast growing left brace 110 right brace facet dominates in the case of left brace 100 right brace Si substrate. This phenomenon can be explained using a microscopic model of crystallization. Similar results are obtained for seeds surrounded by an SiO//2 layer and seeds surrounding an SiO//2 island, which have to be taken into consideration in practical device design.

    本文言語English
    ホスト出版物のタイトルConference on Solid State Devices and Materials
    出版社Japan Soc of Applied Physics
    ページ183-186
    ページ数4
    ISBN(印刷版)4930813212
    出版ステータスPublished - 1987 12月 1

    出版物シリーズ

    名前Conference on Solid State Devices and Materials

    ASJC Scopus subject areas

    • 工学(全般)

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