Seebeck enhancement through miniband conduction in III-V semiconductor superlattices at low temperatures

Je Hyeong Bahk, Ramin Banan Sadeghian, Zhixi Bian, Ali Shakouri

    研究成果: Article

    10 被引用数 (Scopus)

    抄録

    We present theoretically that the cross-plane Seebeck coefficient of InGaAs/InGaAlAs III-V semiconductor superlattices can be significantly enhanced through miniband transport at low temperatures. The miniband dispersion curves are calculated by self-consistently solving the Schrödinger equation with the periodic potential, and the Poisson equation taking into account the charge transfer between the two layers. Boltzmann transport in the relaxation-time approximation is used to calculate the thermoelectric transport properties in the cross-plane direction based on the modified density of states and group velocity. It is found that the cross-plane Seebeck coefficient can be enhanced more than 60% over the bulk values at an equivalent doping level at 80 K when the Fermi level is aligned at an edge of the minibands. Other thermoelectric transport properties are also calculated and discussed to further enhance the thermoelectric power factor.

    本文言語English
    ページ(範囲)1498-1503
    ページ数6
    ジャーナルJournal of Electronic Materials
    41
    6
    DOI
    出版ステータスPublished - 2012 6 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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