抄録
A large second-order nonlinearity in Ge-doped silica glass induced by simultaneous applications of a high DC electric field and ultraviolet irradiation (UV-poling) is reported. The nonlinearity thus induced has been found to be quite relevant to the GeE′ center. The d coefficient so far obtained exceeds the second biggest d-tensor component of LiNbO3.
本文言語 | English |
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ページ(範囲) | 94-101 |
ページ数 | 8 |
ジャーナル | Proceedings of SPIE - The International Society for Optical Engineering |
巻 | 3542 |
出版ステータス | Published - 1998 |
イベント | Proceedings of the 1998 Conference on Doped Fiber Devices II - Boston, MA, USA 継続期間: 1998 11 2 → 1998 11 3 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering