Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition

T. Nagata, P. Ahmet, Y. Z. Yoo, K. Yamada, K. Tsutsui, Y. Wada, T. Chikyow

研究成果: Conference article査読

28 被引用数 (Scopus)

抄録

A binary alloy Schottky barrier diode on zinc oxide (ZnO) was developed using the combinatorial ion beam-assisted deposition system. The compositional fraction of the binary alloy was continuously varied using the composition-spread technique, to control the Schottky barrier height. After metal deposition, patterned Schottky diodes were fabricated on a ZnO single-crystal substrate. Pt-Ru alloy was selected from the work function viewpoint. Our experiments showed that the compositional fraction of the Schottky binary alloys changed continuously as designed and the Schottky barrier heights measured by current-voltage (I-V) measurements increased with increasing Pt content. Maximum barrier height difference for ZnO was 137 meV. Using ion beam deposition in parallel with the combinatorial system showed that the Schottky barrier heights for ZnO can be controlled by binary metal alloying.

本文言語English
ページ(範囲)2503-2506
ページ数4
ジャーナルApplied Surface Science
252
7
DOI
出版ステータスPublished - 2006 1月 21
外部発表はい
イベントProceedings of the Third Japan-US Workshop on Combinatorial Material Science and Technology CMST-e SI -
継続期間: 2004 12月 72004 12月 10

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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