Schottky-Barrier Properties of Nearly-Ideal (N ≃1) Al Contacts on MBE- and Heat Cleaned-Gaas Surfaces

Hiroyuki Sakaki, Yoshinobu Sekiguchi, Dian Chao Sun, Mitsuhiro Taniguchi, Hideo Ohno, Akihiro Tanaica

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Aluminum films were deposited in ultra-high vacuum onto heat-cleaned-surfaces as well as oxygen-free MBE surfaces of (100) GaAs to form Schottky barriers with and without intervening oxide layers. The measured ideality factor n was close to unity (nç1.02ç1.10) irrespective of the oxide thickness tox, indicating the transport being dominated by thermionic emission processes. In contrast, the barrier height decreased systematically from 0.89 eV to 0.67 eV, as toxis reduced, suggesting the presence of negatively charged centers (≃1012/cm2) at GaAs/oxide interfaces.

本文言語English
ページ(範囲)L107-L110
ジャーナルJapanese journal of applied physics
20
2
DOI
出版ステータスPublished - 1981 2月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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