Schottky barrier inhomogeneity at Au/Si(111) interfaces investigated using ultrahigh-vacuum ballistic electron emission microscopy

Touru Sumiya, Tadao Miura, Haruko Fujinuma, Shun Ichiro Tanaka

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Ultrahigh-vacuum ballistic electron emission microscopy (UHV-BEEM) has been used to study the electron transport across Au/n-type Si(111) interfaces. A BEEM image revealed that an Au film deposited at about 130°C included regions in which the BEEM current was significantly reduced. The ballistic transmissivity across the Au/Si(111) interface was found to be markedly reduced in these regions. Post-annealing of the sample at 300°C in UHV resulted in the absence of ballistic transmissivity throughout the sample. This indicated that the Au-Si alloy formed at the interface scattered the ballistic electrons strongly. We attribute the appearance of the regions to the formation of the Au-Si alloy at the Au/Si interface. We further demonstrate that the growth of Au on a clean Si(111) surface took place in a layer-by-layer fashion at room temperature. The BEEM measurements indicated the formation of a homogeneous interface without regions with reduced ballistic transmissivity.

本文言語English
ページ(範囲)329-333
ページ数5
ジャーナルApplied Surface Science
117-118
DOI
出版ステータスPublished - 1997 6 2
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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