Scanning tunnelling microscopy of fullerenes on metal and semiconductor surfaces

R. Z. Bakhtizin, T. Hashizume, X. D. Wang, T. Sakurai

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The current state of the ultra-high vacuum scanning tunneling microscopy (STM) of fullerene molecules is reviewed with the use of the authors' work. Emphasis is placed on the interaction of the C60 and C70 fullerenes, separately or in mixture, with semiconductor [Si(111)-7×7 and Si(100)-2×1] and metal [Cu(111)-1×1 and Ag(111)-1×1] surfaces. Using STM enables the fullerene adsorption geometry and the corresponding surface reconstruction to be directly observed and, at high resolutions, reveals intramolecular structures which are analyzed theoretically within the local charge distribution model. Results on the ordered growth of fullerene films on metal and semiconductor surfaces are presented and discussed.

本文言語English
ページ(範囲)306-307
ページ数2
ジャーナルUspekhi Fizicheskikh Nauk
167
3
出版ステータスPublished - 1997
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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