Scanning tunneling microscopy study of initial growth of CaF2 and BaF2 on Si(111)

Touru Sumiya, Tadao Miura, Haruko Fujinuma, Shun Ichiro Tanaka

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Scanning tunneling microscopy (STM) has been used to investigate nucleation and initial growth in the heteroepitaxies of calcium fluoride (CaF2) and barium fluoride (BaF2) on Si(111) surfaces in situ. The fluoride depositions and the STM measurements are performed at a substrate temperature of about 400°C. STM images clearly show that a BaF2-deposited surface has a different morphology from that of CaF2-deposited surface. Preferential nucleation and island growth of BaF2 only occur at steps and domain boundaries on a Si(111)-7 x 7 reconstructed surface. On the other hand, CaF2 islands nucleate not only at steps and domain boundaries but also in domain-boundary-free regions of a Si(111) surface. We attribute the difference in the morphologies to the much higher mobility and diffusion length of a BaF2 molecule in comparison to those of a CaF2 molecule on a Si(111) surface at 400°C. We also report the first STM measurement of a (CAF2 + BaF2)-coexisting surface at 480°C.

本文言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
35
8 SUPPL. B
出版ステータスPublished - 1996 8 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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