Scanning tunneling microscopy of vt x /t-bi reconstruction on the si(111) surface

Chan Park, Raouf Z. Bakhtizin, Tomihiro Hashizume, Toshio Sakurai

    研究成果: Article査読

    11 被引用数 (Scopus)

    抄録

    Bi-induced (VlTx VT)R30° structures formed on the Si(lll) surface are studied using scanning tunneling microscopy (STM) and LEED. Three distinct phases: monomer, trimer and honeycomb phases are identified for the first time by STM, depending on the Bi coverage, even though the /3 x V1T symmetry has been always preserved in the LEED observation. At low coverages, Bi atoms are found to occupy the T4 site. In this adsorption geometry, a monomer phase (a-phase) are formed stably up to an ideal coverage of l/3 ML. In trimer symmetry (/9-phase) at saturation coverage of 1 ML, the individual atoms of the Bi clusters are clearly resolved. Between these two coverages, however, a honeycomb-type x /3- reconstruction has been also found, by STM, to coexist with the trimer phase. This result reveals a new coverage dependent reconstruction process involving the V3"x V3- reconstruction of Si(lll) surface.

    本文言語English
    ページ(範囲)L290-L293
    ジャーナルJapanese journal of applied physics
    32
    2 B
    DOI
    出版ステータスPublished - 1993 2

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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