抄録
Employing field ion-scanning tunneling microscopy (FI-STM), we have studied the GaAs(001) surface prepared by the migration enhanced epitaxy (MEE) technique in a wide range of growth temperatures. The STM images clearly show the advantageous effect of enhanced Ga migration of MEE on the surface morphology of the GaAs(001) surface.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 5021-5025 |
| ページ数 | 5 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 75 |
| 号 | 10 |
| DOI | |
| 出版ステータス | Published - 1994 |
ASJC Scopus subject areas
- 物理学および天文学（全般）