Scanning nonlinear dielectric microscopy observation of accumulated charges in metal-SiO2-SiN-SiO2-Si flash memory by detecting higher-order nonlinear permittivity

Koichiro Honda, Yasuo Cho

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Using scanning nonlinear dielectric microscopy with high-sensitivity capacitance variation detection capability, we succeeded in the high-resolution visualization of accumulated charges in metal-SiO2-SiN-SiO 2-Si flash memory by detecting the higher-order (2-4 order) nonlinear permittivity. The obtained image contrast can be interpreted using a higher-order differential coefficient (dnC/dVn) of a quasi-static C-V curve of the SiO2-SiN-SiO2-Si interface capacitance as a function of externally applied voltage. Moreover, by using a higher-order nonlinear image, the charge concentration resolution can be improved. Thus, improved resolution of the spatial charge distribution is expected through improvement of the concentration resolution by the imaging of higher-order nonlinear dielectric terms.

本文言語English
論文番号242101
ジャーナルApplied Physics Letters
101
24
DOI
出版ステータスPublished - 2012 12 10

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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