Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology

Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Kazuhiko Endo, Shin Ichi O'Uchi, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara

研究成果: Conference contribution

抄録

The effectiveness of amorphous metal gate (MG) in suppressing low-frequency noise (LFN) for FinFETs has been thoroughly investigated. It was demonstrated that the amorphous TaSiN MGs with various atomic compositions provide flexible tuning of threshold voltage (Vt) as well as small Vt variability, namely AVt. It was found that the TaSiN-MG FinFETs exhibit drastic reduction of LFN in comparison to the poly-crystalline TiN MG case. Modelling by 3D-TCAD reveals that work function variation (WFV) of the MG has a significant impact on LFN generation. Suppression of AVt and LFN is highly beneficial to conduct further scaling of analog/digital components in SoC.

本文言語English
ホスト出版物のタイトル2014 IEEE International Electron Devices Meeting, IEDM 2014
出版社Institute of Electrical and Electronics Engineers Inc.
ページ12.1.1-12.1.4
February
ISBN(電子版)9781479980017
DOI
出版ステータスPublished - 2015 2 20
外部発表はい
イベント2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
継続期間: 2014 12 152014 12 17

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
番号February
2015-February
ISSN(印刷版)0163-1918

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period14/12/1514/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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