SAW substrate for duplexer with excellent temperature characteristics and large reflection coefficient realized by using flattened Si02 film and thick heavy metal film

Michio Kadota; Takeshi Nakao; Norio Taniguchi; Eiichi Takata; Masakazu Mimura; Kenji Nishiyama; Takuo Hada; Tomohisa Komura

doi:10.1109/MWSYM.2006.249550

SAW substrate for duplexer with excellent temperature characteristics and large reflection coefficient realized by using flattened Si02 film and thick heavy metal film

Michio Kadota, Takeshi Nakao, Norio Taniguchi, Eiichi Takata, Masakazu Mimura, Kenji Nishiyama, Takuo Hada, Tomohisa Komura

工学研究科・ロボティクス専攻

研究成果: Conference article › 査読

17 被引用数 (Scopus)

抄録

Authors previously proposed a SAW PCS-duplexer with an excellent temperature coefficient of frequency (TCP) and a good frequency characteristic composed of a thick-SiO2/thin-Au-electrodes /LiIaO3 structure. However, a sheet resistance of thin Au electrode is large, compared with thick Al-electrode, so thin Au-electrode is not suitable for filters requiring low loss. Authors tried to use thick Cu electrodes with small resistance By flattening large convex portions on the SiO2 surface, a SAW substrate suitable for US-PCS duplexer with low insertion loss and an excellent TCF was realized.

本文言語	English
論文番号	4014910
ページ（範囲）	382-385
ページ数	4
ジャーナル	IEEE MTT-S International Microwave Symposium Digest
DOI	https://doi.org/10.1109/MWSYM.2006.249550
出版ステータス	Published - 2006 12月 1
イベント	2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States 継続期間: 2006 6月 11 → 2006 6月 16

ASJC Scopus subject areas

放射線
凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1109/MWSYM.2006.249550

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引用スタイル

Kadota, M., Nakao, T., Taniguchi, N., Takata, E., Mimura, M., Nishiyama, K., Hada, T., & Komura, T. (2006). SAW substrate for duplexer with excellent temperature characteristics and large reflection coefficient realized by using flattened Si02 film and thick heavy metal film. IEEE MTT-S International Microwave Symposium Digest, 382-385. [4014910]. https://doi.org/10.1109/MWSYM.2006.249550

Kadota, M, Nakao, T, Taniguchi, N, Takata, E, Mimura, M, Nishiyama, K, Hada, T & Komura, T 2006, 'SAW substrate for duplexer with excellent temperature characteristics and large reflection coefficient realized by using flattened Si02 film and thick heavy metal film', IEEE MTT-S International Microwave Symposium Digest, pp. 382-385. https://doi.org/10.1109/MWSYM.2006.249550

@article{9d4aa131773744fa908ce671a0587e3f,

title = "SAW substrate for duplexer with excellent temperature characteristics and large reflection coefficient realized by using flattened Si02 film and thick heavy metal film",

abstract = "Authors previously proposed a SAW PCS-duplexer with an excellent temperature coefficient of frequency (TCP) and a good frequency characteristic composed of a thick-SiO2/thin-Au-electrodes /LiIaO3 structure. However, a sheet resistance of thin Au electrode is large, compared with thick Al-electrode, so thin Au-electrode is not suitable for filters requiring low loss. Authors tried to use thick Cu electrodes with small resistance By flattening large convex portions on the SiO2 surface, a SAW substrate suitable for US-PCS duplexer with low insertion loss and an excellent TCF was realized.",

keywords = "Cu electrode, Duplexer, Excellent TCF, Flattened SiO2, LiTaO3",

author = "Michio Kadota and Takeshi Nakao and Norio Taniguchi and Eiichi Takata and Masakazu Mimura and Kenji Nishiyama and Takuo Hada and Tomohisa Komura",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/MWSYM.2006.249550",

language = "English",

pages = "382--385",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2006 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 11-06-2006 Through 16-06-2006",

}

TY - JOUR

T1 - SAW substrate for duplexer with excellent temperature characteristics and large reflection coefficient realized by using flattened Si02 film and thick heavy metal film

AU - Kadota, Michio

AU - Nakao, Takeshi

AU - Taniguchi, Norio

AU - Takata, Eiichi

AU - Mimura, Masakazu

AU - Nishiyama, Kenji

AU - Hada, Takuo

AU - Komura, Tomohisa

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Authors previously proposed a SAW PCS-duplexer with an excellent temperature coefficient of frequency (TCP) and a good frequency characteristic composed of a thick-SiO2/thin-Au-electrodes /LiIaO3 structure. However, a sheet resistance of thin Au electrode is large, compared with thick Al-electrode, so thin Au-electrode is not suitable for filters requiring low loss. Authors tried to use thick Cu electrodes with small resistance By flattening large convex portions on the SiO2 surface, a SAW substrate suitable for US-PCS duplexer with low insertion loss and an excellent TCF was realized.

AB - Authors previously proposed a SAW PCS-duplexer with an excellent temperature coefficient of frequency (TCP) and a good frequency characteristic composed of a thick-SiO2/thin-Au-electrodes /LiIaO3 structure. However, a sheet resistance of thin Au electrode is large, compared with thick Al-electrode, so thin Au-electrode is not suitable for filters requiring low loss. Authors tried to use thick Cu electrodes with small resistance By flattening large convex portions on the SiO2 surface, a SAW substrate suitable for US-PCS duplexer with low insertion loss and an excellent TCF was realized.

KW - Cu electrode

KW - Duplexer

KW - Excellent TCF

KW - Flattened SiO2

KW - LiTaO3

UR - http://www.scopus.com/inward/record.url?scp=34250318933&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250318933&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2006.249550

DO - 10.1109/MWSYM.2006.249550

M3 - Conference article

AN - SCOPUS:34250318933

SN - 0149-645X

SP - 382

EP - 385

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

M1 - 4014910

T2 - 2006 IEEE MTT-S International Microwave Symposium Digest

Y2 - 11 June 2006 through 16 June 2006

ER -