S3-P4: Impact of drain conductance in InGaaS-HEMTs operated in a class-F amplifier

Tomohiro Yoshida, Taiichi Otsuji, Tetsuya Suemitsu, Masashi Oyama, Kunihiko Watanabe, Yohtaro Umeda

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The Power Added Efficiency (PAE) of amplifiers operated in wave bands, such as 60 GHz, is still under 30%. A switching type amplifier consisting of ultrahigh-frequency transistors is a promising way to improve PAE. Therefore we proposed 60-GHz-band class-F amplifier with InGaAs-based high electron mobility transistors (HEMTs). In such high frequencies, the parasitic delay time is the main cause of degradation of the RF characteristics in HEMTs. In this paper, we characterized the parasitic gate delay time when the device is operated on the load line of the class-F amplifier. This result suggests us that the drain conductance affects the degradation of parasitic delay time at low drain bias condition on the load line. Hence the reduction of the source resistance and drain resistance is also important as well as the reduction of capacitance in order to improve the total performance of the amplifier.

本文言語English
ホスト出版物のタイトルLester Eastman Conference 2014 - High Performance Devices, LEC 2014
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479964413
DOI
出版ステータスPublished - 2014 11 10
イベント2014 Lester Eastman Conference on High Performance Devices, LEC 2014 - Ithaca, United States
継続期間: 2014 8 52014 8 7

出版物シリーズ

名前Lester Eastman Conference 2014 - High Performance Devices, LEC 2014

Other

Other2014 Lester Eastman Conference on High Performance Devices, LEC 2014
CountryUnited States
CityIthaca
Period14/8/514/8/7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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